Nanometer-scale Sharpness in Corner-overgrown Heterostructures
Nanometer-scale
Sharpness in Corner-overgrown Heterostructures
Scientific
Achievement
A
corner-overgrown GaAs/AlGaAs heterostructure was investigated with
transmission
and scanning transmission electron microscopy, demonstrating
self-limiting growth
of an extremely sharp corner profile of 3.5 nm width.
In the AlGaAs layers we observe self-ordered
diagonal stripes, precipitating exactly at the corner, which are
regions of
increased Al content measured by an XEDS analysis.
A quantitative model for self-limited growth
is adapted to the present case of faceted MBE growth, and the corner
sharpness
has been correlated with quantum-confined structures.
We note that MBE corner overgrowth maintains
nm-sharpness even after microns of growth, allowing the realization of
corner-shaped nanostructures.
Significance
The
TEM/STEM/XEDS results demonstrate that the corner overgrowth technique
yields
extremely sharp self-limited corner profiles, justifying the assumption
of a
sharp corner potential in bent quantum Hall junctions [Grayson, et al.,
Phys.
Rev. B 76 (2007)]. Compared to the lower
resolution TEM images
of self-ordered diagonal stripes shown in Biasiol, et al., Phys.
Rev. B 65 )2002), the
stripes observed in our
corner-overgrown structure are a factor of 5 thinner.
Both the width of the self-limited profile
and the Al adatom segregation observed in XEDS measurements on the
AlGaAs
layers can be estimated from a quantitative growth model with
reasonable
assumptions. Due to
the self-limitation
it is possible to grow sharp corner profiles that are translated over
microns
of growth, where the minimum width is determined by the growth
conditions. This
shows that the combination of MBE and
corner overgrowth allows the precise control of one-dimensional quantum
confinement, and justifies the assumptions of previous work of a sharp
corner
with a one-dimensional accumulation wire [Grayson, Physica E
22
(2004); Grayson, et al., Phys. Rev. B 76 (2007)].
This work has
been submitted to Applied Physics Letters in 2008.
Performers
P. Cantwell and
E. A. Stach (Purdue U.); M. Grayson
(Northwestern U.); N. J. Zaluzec (Argonne-MSD)

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