Diamond Nanowires and the Mechanism of Electrical Conductivity in
Diamond
Nanowires and the Mechanism of Electrical Conductivity in
Ultrananocrystalline
Diamond (UNCD) Films
Scientific
Achievement
Ultrananocrystalline
diamond (UNCD) films consist of randomly oriented 3-5nm crystallites
surrounded
by atomically abrupt 0.2nm wide, largely sp2
bonded grain
boundaries. Such
films, typically
synthesized from hydrogen-poor, 1% CH4-99% Ar
microwave plasmas, are
highly electrically insulating but are rendered highly conducting (up
to
several hundred S/cm) by substituting up to 20% of N2
for Ar in the
synthesis gas. In
recent work, the
origin of the n-type metal-insulator transition in UNCD films has been
shown to
be strongly correlated to the formation of partially oriented diamond
nanowires
when nitrogen is added to the synthesis gas.
The nanowires, which have been characterized by SEM,
HRTEM, EELS and
Raman studies, are 80-100nm in length and consist of 5nm wide 6-10nm
long
segments of diamond crystallites exhibiting atomically sharp interfaces
separated by twin boundaries. Each
nanowire is enveloped in a 1-2nm thick sheath of sp2
bonded carbon
that provides the conductive path for electrons.
Significance
These
films are the only currently available source of n-type diamond
material
conducting at ambient temperatures.
These studies provide a better understanding of the
mechanism underlying
the insulator-metal transition of these films. In fact, we concluded
that this
transition is strongly correlated with the formation of these diamond
NWs. These NWs are
enveloped by an amorphous carbon
layer that seems to provide the conductive path for electrons. Thus these works provide
further insight into
the interesting properties of these films.
This
work has been presented in invited and contributed talks at the
presented
in invited and contributed talks at the NanoSMat-07
International Conference
on Surfaces, Coatings and Nanostructured Materials, Algarve, Portugal,
July
9-11, 2007, and at the MRS
Fall Meeting, Boston, MA, Dec. 1-5, 2008.
This work has been published in Phys. Rev. B 75,
195431 (2007). It
has been submitted to Applied Physics
Letters.
Performers
P. Bruno, D. M.
Gruen, (Argonne-MSD); R. Arenal (Laboratoire
d'Etude des Microstructures, ONERA-CNRS)

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