HITACHI H-9000NAR Selected Specifications/Operating Conditions

        • Accelerating Voltages       100-300 kV
        • Specimen Chamber Vacuum       < 4x10-7 Torr
        • Spherical Aberration Coefficient (Cs)       2.8 mm
        • Goniometer Tilts       +/-45deg. (X-Axis); +/-30deg. (Y-Axis)
        • Minimum Spot Size at 300 kV       ~8 nm
        • Magnification Ranges
          1. Low Mag       200-500 X
          2. Selected Area Mag       4-300 kX
          3. Zoom       1-1,000 kX
        • Image Resolution (300 kV)
          1. ion beamline connected or disconnected       0.25 nm
          2. Guaranteed Line at 300 kV; ion beamline disconnected       0.14 nm
        • Recording Capabilities
          1. Film: (8 cm x 10 cm) SO-163 (40 sheets)
          2. Video Capabilities:
            1. Gatan Model 622 Image IntensifiedCamera on column axis
            2. Avio Image S-II Real Time Processor (Also serves HVEM)
            3. VHS Video Tape Format (including S-VHS)
        • Angle between Incident Electron and Ion Beam       30deg.
        • Ion Beam Diameter at Specimen Position       ~1.5mm
        • Ion Irradiation Conditions (Limited by Bending Magnet)
          1. 650kV Accelerator--All ions to 600 kV
          2. Tandem--He to 2 MV; Ne to 1.8 MV; Ar to 0.9 MV ; Kr to 0.4 MV (singly charged ions)
        • Ion Beam Dosimetry within 2 cm of specimen
          1. Skim Cup
          2. Faraday Cup System
          3. Faraday Cup Holder

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